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Layout and process design
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English
简体中文
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IC Design & Wafer Processing
Integrated Circuit Micro/Nano
Fabrication Processes and Equipment
IC Design & Wafer Processing
Photolithography types and processes
Lithography Process
Key parameters：
1. Resolution: within 1um
2. Engraving accuracy: within 2um
3. Verticality of rubber type: 90 ° ±1 °
4. Exposure thickness: 1-30um
Lithography Process
Process Demonstration
Process Demonstration
Process Demonstration
PECVD (2-12inch SiO2/SiNx)
Thin film deposition
PECVD (2-12inch SiO2/SiNx)
Key parameters:
1.Temperature control range：200℃~350℃
2.Maximum RF power：RF 0-300W
3.Temperature control range：200℃~350℃
4.Gas flow range:SiH4 flow rate 0-40sccm，N20 flow rate 0-1600sccm
Process Demonstration
Process Demonstration
Etch Process
Thin film deposition
Etch Process Equipment
Process Demonstration
Process Demonstration
Process Demonstration
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