100nm CD-SEM Standard Wafer

1.Overview:
Wafer Size: 8”
Wafer Thickness: 725±25um
Wafer Layout: 3*3 Repeating Units
Horizontal & Vertical Dense Line Raster: 100/50/25/10/5/3/2/1/0.5/0.4/0.35/0.25/0.2/0.15/0.1um
Horizontal & Vertical Sparse Line Raster: 25/10/5/3/2/1/0.5/0.4/0.35/0.3/0.2/0.15/0.1um
Checkerboard Lens Distortion Calibration: 20/10/5/3/1/0.5um Checkerboard area
Square calibration area: 100/50/25/10/5/3/2/1/0.5um
Concentric ring calibration area: 50/30/20/10/5/3/2/1/0.5um
CD SEM spot-changing test area: 0.1/0.11/0.13/0.18um
In-layer OVL calibration function: includes Bar-in-Bar, Box-in-Box, AIM

2.Shot/Die Layout：


Each shot is a die, measuring 20*21mm, and can be cut into smaller samples for individual sale.

3. Calibration Feature Image
3.1 Horizontal and Vertical Dense Raster Regions:
3.1.1 Horizontal and Vertical Dense Raster Regions 1
CD: 100/50/25/10/5/3/2/1/0.5/0.4/0.35/0.25/0.2/0.15/0.1um, Pitch: 2*CD

3.1.2 Horizontal and vertical progressive areas 2


3.2 Sparse Horizontal and Vertical Gratings:

CD：25um， Pitch：50um

CD：10um，Pitch：20um

CD：5um，Pitch：10um

CD：3um，Pitch：10um

CD：2um，Pitch：10um

CD：1um，Pitch：10um

CD：0.5um，Pitch：10um

CD：0.4um，Pitch：2um

CD：0.35um，Pitch：2um

CD：0.3um，Pitch：2um

CD：0.25um，Pitch：2um

CD：0.2um，Pitch：2um

CD：0.15um，Pitch：2um

CD：0.1um，Pitch：2um